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篇目详细内容 |
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【篇名】 |
Quantum oscillations in Pb/Si (111) heterostructure system |
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【刊名】 |
Frontiers of Physics in China |
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【刊名缩写】 |
Front. Phys. China |
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【ISSN】 |
1673-3487 |
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【EISSN】 |
1673-3606 |
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【DOI】 |
10.1007/s11467-006-0021-0 |
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【出版社】 |
Higher Education Press and Springer-Verlag |
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【出版年】 |
2006 |
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【卷期】 |
1
卷3期 |
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【页码】 |
323-333
页,共
11
页 |
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【作者】 |
ZHANG Yan-feng;
LI Shao-chun;
MA Xu-cun;
JIA Jin-feng;
XUE Qi-kun;
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【关键词】 |
quantum wells; scanning tunnelling microscopy; photoemission; thin films; physical properties |
【摘要】 |
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This paper summarizes our recent work on the study of quantum size effects (QSE) and novel physical properties of the Pb/Si (111) heterostructure. Two different types of samples were investigated. One is wedge-shaped Pb islands, and the other is atomically flat Pb thin films. With scanning tunneling microscopy (STM) manipulation, we observed an intriguing morphology dynamics of the islands that swings between two extreme energy states, like that in a classical pendulum. We show that the dynamics is a result of the competition between the QSE and the classical step free energy minimizing effect. For the second type of the samples, the QSE is studied in terms of thickness-dependent film stability, electronic structure and physical properties by using STM, angle-resolved photoemission spectroscopy (ARPES) and transport measurement. The results consistently reveal the formation of quantum well states (QWS) due to electron confinement in the films. This size effect could greatly modify the electronic structure near the Fermi level and lead to quantum oscillations in superconductivity, electron-phonon coupling and thermal expansion. The work unambiguously demonstrates the possibility of quantum engineering of physical properties of thin films by exploiting well-controlled and thickness-dependent QSE. |
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