(请使用IE浏览器访问本系统)

  学科分类

  基础科学

  工程技术

  生命科学

  人文社会科学

  其他

篇目详细内容

【篇名】 Microscopic phonon theory of Si/Ge nanocrystals
【刊名】 Frontiers of Physics in China
【刊名缩写】 Front. Phys. China
【ISSN】 1673-3487
【EISSN】 1673-3606
【DOI】 10.1007/s11467-008-0019-x
【出版社】 Higher Education Press and Springer-Verlag
【出版年】 2008
【卷期】 3 卷2期
【页码】 165-172 页,共 8 页
【作者】 CHENG Wei; MARX David; REN Shang-fen;
【关键词】 semiconductor nanocrystal; alloy; phonon; lattice dynamics; Raman

【摘要】
Microscopic phonon theory of semiconductor nanocrystals (NCs) is reviewed in this paper. Phonon modes of Si and Ge NCs with various sizes of up to 7 nm are investigated by valence force field theory. Phonon modes in spherical SiGe alloy NCs approximately 3.6 nm (containing 1147 atoms) in size have been investigated as a function of the Si concentration. Phonon density-of-states, quantum confinement effects, as well as Raman intensities are discussed.
版权所有 © CALIS管理中心 2008