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篇目详细内容 |
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【篇名】 |
Electronic properties of boron nanotubes with axial strain |
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【刊名】 |
Frontiers of Physics in China |
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【刊名缩写】 |
Front. Phys. China |
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【ISSN】 |
1673-3487 |
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【EISSN】 |
1673-3606 |
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【DOI】 |
10.1007/s11467-009-0028-4 |
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【出版社】 |
Higher Education Press and Springer-Verlag |
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【出版年】 |
2009 |
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【卷期】 |
4
卷3期 |
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【页码】 |
383-388
页,共
6
页 |
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【作者】 |
Yi DING (丁一);
Jun NI (倪军);
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【关键词】 |
boron nanotube; strain; electronic structure; band gap |
【摘要】 |
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The electronic properties of boron nanotubes with axial strain are investigated by first principle calculations. The band gaps of the (3, 3) and (5, 0) boron nanotubes are found to be modified by axial strain significantly. We find that the semiconductor–metal transition occurs for the (3, 3) boron nanotubes with both compressive and tensile strain. While for the (5, 0) boron nanotubes, only the tensile strain induces the semiconductor–metal transition. These boron nanotubes have the largest gaps under compressive strain. |
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