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篇目详细内容 |
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【篇名】 |
In situ characterization of optoelectronic nanostructures and nanodevices |
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【刊名】 |
Frontiers of Physics in China |
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【刊名缩写】 |
Front. Phys. China |
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【ISSN】 |
1673-3487 |
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【EISSN】 |
1673-3606 |
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【DOI】 |
10.1007/s11467-010-0131-6 |
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【出版社】 |
Higher Education Press and Springer-Verlag Berlin
Heidelberg |
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【出版年】 |
2010 |
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【卷期】 |
5
卷4期 |
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【页码】 |
405-413
页,共
9
页 |
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【作者】 |
Min
GAO (高旻);
Cheng-yao LI (李成垚);
Wen-liang LI (李文亮);
Xiao-xian ZHANG (张小娴);
Lian-mao PENG (彭练矛);
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【关键词】 |
one-dimensional (1-D) semiconductor nanostructure; optoelectronic nanodevices; in situ electron microscopy; optical confinement; deep level emission |
【摘要】 |
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One-dimensional (1-D) semiconductor nanostructures can effectively transport electrons and photons, and are considered to be promising building blocks for future optoelectronic nanodevices. In this review, we present our recent efforts to integrate optical techniques and in situ electron microscopy for comprehensively characterizing individual 1-D optoelectronic nanostructures and nanodevices. The technical strategies and their applications in “green” emission and optical confinement in 1-D ZnO nanostructures will be introduced. We also show in situ assembly and characterization of nanostructures for optoelectronic device purposes. Using these examples, we demonstrate that the combination of optical techniques and in situ electron microscopy can be powerful for the studies of optoelectronic nanomaterials and nanodevices. |
