We present the temperature dependent electrical transport measurements of Ag/Si(111)-()R30？ by the in situ micro-four-point probe method integrated with scanning tunneling microscopy. The surface structure characterizations show hexagonal patterns at room temperature, which supports the inequivalent triangle (IET) model. A metal-insulator transition occurs at ~115 K.The lowtemperature transportmeasurements clearly reveal the strong localization characteristics of the insulating phase.
