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篇目详细内容

【篇名】 Efficient deep red phosphorescent OLEDs using 1,2,4-thiadiazole core-based novel bipolar host with low efficiency roll-off
【刊名】 Frontiers of Optoelectronics
【刊名缩写】 Front. Optoelectron.
【ISSN】 2095-2759
【EISSN】 2095-2767
【DOI】 10.1007/s12200-018-0855-4
【出版社】
【出版年】 2018
【卷期】 11 卷4期
【页码】 375-384 页,共 10 页
【作者】 Runda GUO; Wenzhi ZHANG; Qing ZHANG; Xialei LV; Lei WANG;
【关键词】 1|2|4-thiadiazole core|low efficiency roll-off|deep red phosphorescent devices|symmetrical charge-trapping effect

【摘要】

A series of 1,2,4-thiadiazole core-based bipolar materials, 2,2'-(1,2,4-thiadiazole-3,5-diyl)bis(N,N-diphenylaniline) (o-TPATHZ), 3,3′-(1,2,4-thiadiazole-3,5-diyl)bis(N,N-diphenylaniline) (m-TPATHZ) and 4,4'-(1,2,4-thiadiazole-3,5-diyl)bis(N,N-diphenylaniline) (p-TPATHZ) were developed as the host matrixes for the deep red phosphorescent emitters tris(1-phenylisoqiunoline)iridium (Ir(piq)3) and [bis(2-methyldibenzo-[f,h]-quinoxaline)Ir(III)(acetylacetonate)] (Ir(MDQ)2(acac)). By systematic studying, we demonstrated that there are two types of charge-trapping effect within the emissive layers through adjusting the host-guest compatibility. And, it is revealed that a symmetric charge-trapping effect can contribute to realizing a stable charge-balance, which led to a mitigating efficiency roll-off at high current density. Consequently, a maximum external quantum efficiency (EQE) of 16.2% was achieved by an optimized device with p-TPATHZ-Ir(piq)3 emissive layer. Remarkably, the EQE still remained as high as 15.7% at the high luminance of 1000 cd/m2.

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