(请使用IE浏览器访问本系统)

  学科分类

  基础科学

  工程技术

  生命科学

  人文社会科学

  其他

篇目详细内容

【篇名】 Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode
【刊名】 Frontiers of Optoelectronics in China
【刊名缩写】 Front. Optoelectron. China
【ISSN】 1674-4128
【EISSN】 1674-4594
【DOI】 10.1007/s12200-009-0070-4
【出版社】 Higher Education Press and Springer-Verlag
【出版年】 2009
【卷期】 2 卷4期
【页码】 446-449 页,共 4 页
【作者】 Feng WEN; Lirong HUANG; Liangzhu TONG; Dexiu HUANG; Deming LIU;
【关键词】 multi-quantum well (MQW); luminescence; dual-wavelength; metal-organic chemical vapor deposition (MOCVD)

【摘要】
Blue and green dual wavelength InGaN/GaN multi-quantum well (MQW) light-emitting diode (LED) has wide applications in full color display, monolithic white LED and solid state lighting, etc. Blue and green dual wavelength LEDs, which consist of InGaN strain-reduction layer, green InGaN/GaN MQW and blue InGaN/GaN MQW, were grown by metal-organic chemical vapor deposition (MOCVD), and the luminescence properties of dual wavelength LEDs with different well arrangements were studied by photoluminescence and electroluminescence. The experimental results indicated that well position played an important role on the luminescence evolvement from photoluminescence to electroluminescence.
版权所有 © CALIS管理中心 2008