Frontiers 系列期刊数据库

(请使用IE浏览器访问本系统)

学科分类

篇目详细内容
【篇名】	InAs/GaAs quantum dots grown on different GaAs substrates with graded InxGa1？xAs strain-reducing layer
【刊名】	Frontiers of Optoelectronics in China
【刊名缩写】	Front. Optoelectron. China
【ISSN】	1674-4128
【EISSN】	1674-4594
【DOI】	10.1007/s12200-010-0109-6
【出版社】	Higher Education Press and Springer-Verlag Berlin Heidelberg
【出版年】	2010
【卷期】	3 卷3期
【页码】	241-244 页,共 4 页
【作者】	Shuping FEI; Zhongwei SHI; Lirong HUANG;
【关键词】	quantum dots (QDs); strain-reducing layer (SRL); gradient composition; misoriented substrate
【摘要】
Self-assembled InAs quantum dots with graded composition strain-reducing layer (SRL) grown on exact substrates were studied. It is shown that a graded InxGa1？xAs SRL leads to growth quality improvement, emission efficiency enhancement, and wavelength blueshift. Samples grown on 2° misoriented substrates with different In contents in graded InxGa1？xAs SRL were also investigated, and emission efficiency enhancement and wavelength blueshift were found when graded SRL was introduced and when the change rate of In content in graded InxGa1？xAs SRL was enlarged.