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篇目详细内容 |
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【篇名】 |
Influence of V/III ratio on QD size distribution |
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【刊名】 |
Frontiers of Optoelectronics in China |
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【刊名缩写】 |
Front. Optoelectron. China |
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【ISSN】 |
1674-4128 |
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【EISSN】 |
1674-4594 |
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【DOI】 |
10.1007/s12200-011-0180-7 |
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【出版社】 |
Higher Education Press and Springer-Verlag Berlin
Heidelberg |
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【出版年】 |
2011 |
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【卷期】 |
4
卷4期 |
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【页码】 |
364-368
页,共
5
页 |
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【作者】 |
Zhongwei SHI;
Lirong HUANG;
Yi YU;
Peng TIAN;
Hanchao WANG;
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【关键词】 |
quantum dots (QDs); V/III ratio; QD size distribution; photoluminescence (PL) |
【摘要】 |
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The influence of V/III ratio on the formation of quantum dots (QDs) grown by metal-organic chemical vapor deposition (MOCVD) is investigated by atomic force microscopy (AFM) and photoluminescence (PL) measurements. As V/III ratio increases, the density of QDs decreases accompanied by the transition of QD size distribution from bimodal (at V/III= 9) to single-modal (at V/III= 15), and then to bimodal (at V/III= 25) again, which is attributed to the change of the indium-species migration length at different V/III ratios. There are PL spectrum redshifts and the PL peak intensity decreases as V/III ratio increases. |
