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篇目详细内容 |
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【篇名】 |
Multiferroic tunnel junctions |
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【刊名】 |
Frontiers of Physics |
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【刊名缩写】 |
Front. Phys |
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【ISSN】 |
2095-0462 |
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【EISSN】 |
2095-0470 |
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【DOI】 |
10.1007/s11467-012-0266-8 |
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【出版社】 |
Higher Education Press and Springer-Verlag Berlin
Heidelberg |
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【出版年】 |
2012 |
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【卷期】 |
7
卷4期 |
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【页码】 |
380-385
页,共
6
页 |
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【作者】 |
Yue-Wei Yin;
Muralikrishna Raju;
Wei-Jin Hu;
Xiao-Jun Weng;
Ke Zou;
Jun Zhu;
Xiao-Guang Li;
Zhi-Dong Zhang;
Qi Li;
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【关键词】 |
multiferroic tunnel junction; ferroelectric film; tunneling magnetoresistance effect; tunneling electroresisitance effect; magnetoelectric coupling |
【摘要】 |
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Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La0.7Ca0.3MnO3 and La0.7Sr0.3MnO3 as the electrodes and ferroelectric (Ba, Sr)TiO3 as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures. |
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